Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Journal article, 2009
gate dielectrics
Rare earth silicate
Silicate formation
Gate first integration
High-k dielectric
model
gd2o3
si(001)
Author
H. D. B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M. Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
I. Z. Mitrovic
University of Liverpool
W.M. Davey
University of Liverpool
S. Hall
University of Liverpool
W.M. Davey
University of Liverpool
K. Cherkaoui
University of Liverpool
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
Bahman Raeissi
Tyndall National Institute at National University of Ireland, Cork
Johan Piscator
Chalmers, Applied Physics, Physical Electronics
Olof Engström
Chalmers, Applied Physics, Physical Electronics
Johan Piscator
Glebe Scientific Ltd.
Microelectronic Engineering
0167-9317 (ISSN)
Vol. 86 7-9 1642-1645Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.mee.2009.03.084