Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Artikel i vetenskaplig tidskrift, 2009

We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.

gate dielectrics

Rare earth silicate

Silicate formation

Gate first integration

High-k dielectric

model

gd2o3

si(001)

Författare

H. D. B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M. Schmidt

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M Schmidt

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

I. Z. Mitrovic

University of Liverpool

W.M. Davey

University of Liverpool

S. Hall

University of Liverpool

W.M. Davey

University of Liverpool

K. Cherkaoui

University of Liverpool

K. Cherkaoui

Tyndall National Institute at National University of Ireland, Cork

Bahman Raeissi

Tyndall National Institute at National University of Ireland, Cork

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johan Piscator

Glebe Scientific Ltd.

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 86 7-9 1642-1645

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/j.mee.2009.03.084