Johan Piscator

Visar 30 publikationer

2011

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi, Johan Piscator, Y. Y. Chen et al
Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70
Artikel i vetenskaplig tidskrift
2011

Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska, Olof Engström, A. Karmous et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413
Artikel i vetenskaplig tidskrift
2011

Spatial variarion of hole eigen energies in Ge/Si quantum wells

M. Kaniewska, Olof Engström, A. Karmous et al
AIP Conference Proceedings. Vol. 1399, p. 293-294
Paper i proceeding
2010

Spatial variations of hole eigen energies in Ge/Si quantum wells

M Kaniewska, Olof Engström, A Karmous et al
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper i proceeding
2010

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Bahman Raeissi, Johan Piscator, Olof Engström
IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705
Artikel i vetenskaplig tidskrift
2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Olof Engström, Bahman Raeissi, Johan Piscator et al
Journal of Telecommunications and Information Technology. Vol. 1, p. 10-
Artikel i vetenskaplig tidskrift
2009

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator, Bahman Raeissi, Olof Engström
Applied Physics Letters. Vol. 94 (21), p. 213507-
Artikel i vetenskaplig tidskrift
2009

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Johan Piscator, Bahman Raeissi, Olof Engström
Journal of Applied Physics. Vol. 106 (5), p. 054510-
Artikel i vetenskaplig tidskrift
2009

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob, M. Schmidt, M Schmidt et al
Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645
Artikel i vetenskaplig tidskrift
2009

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, M Kaniewska, Johan Piscator et al
Materials Science & Engineering B: Solid-State Materials for Advanced Technology. Vol. 165 (1-2), p. 98-102
Paper i proceeding
2009

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Olof Engström, Bahman Raeissi, Johan Piscator et al
8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)
Paper i proceeding
2008

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström, Bahman Raeissi, Johan Piscator
Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-
Artikel i vetenskaplig tidskrift
2008

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, M Schmidt, M.C. Lemme et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252
Artikel i vetenskaplig tidskrift
2008

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

P.K. Hurley, K. Cherkaoui, E O'Connor et al
J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20
Artikel i vetenskaplig tidskrift
2008

Schottky barriers on silicon nanowires influenced by charge configuration

Johan Piscator, Olof Engström
Journal of Applied Physics. Vol. 104 (5), p. 054515-
Artikel i vetenskaplig tidskrift
2008

Multiphonon capture of electrons at high-k-silicon interfaces

Olof Engström, Bahman Raeissi, Johan Piscator
Gordon Conference, New London, New Hampshire, August, 2008
Paper i proceeding
2008

A generalised methodology for oxide leakage current metric

Olof Engström, Johan Piscator, Bahman Raeissi et al
Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-
Paper i proceeding
2008

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
Solid-State Electronics. Vol. 52 (9), p. 1274-1279
Artikel i vetenskaplig tidskrift
2008

Electron traps at HfO2/SiOx interfaces

Bahman Raeissi, Yang Yin Chen, Johan Piscator et al
Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133
Paper i proceeding
2008

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
Physica E: Low-Dimensional Systems and Nanostructures. Vol. 40 (7), p. 2508-2512
Artikel i vetenskaplig tidskrift
2008

Comprehensive study of InAs/GaAs quantum dots by means of complementary methods

M Kaczmarczyk, Olof Engström, Johan Piscator et al
9th Exmatec, Lodz, June 2008
Paper i proceeding
2007

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007, p. 283-286
Paper i proceeding
2007

Schottky barrier modulation on silicon nanowires

Johan Piscator, Olof Engström
Applied Physics Letters. Vol. 90, p. 132197-1
Artikel i vetenskaplig tidskrift
2007

A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Johan Piscator, Olof Engström
European Materials research Society Meeting, Strasbourg, May 2007
Paper i proceeding
2007

Schottky Contacs on Silicon Nanowires

Johan Piscator
Licentiatavhandling
2007

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

P.K. Hurley, K. Cherkaoui, E O'Connor et al
Proc. Electrochemical Society Meeting, Washington DC, October 2007
Paper i proceeding
2007

Schottky barrier lowering on silicon nanowires by introduction of positive charge

Johan Piscator, Olof Engström
ICON 2007 Proceedings booklet: The Second International Conference on One-dimensional Nanomaterials
Paper i proceeding
2005

Applications of SOI materials to quantum devices and Microsystems

Johan Piscator, Alexandra Nafari, Martin Bring et al
EUROSOI-2005
Paper i proceeding
2004

Electron capture cross sections of InAs/GaAs quantum dots

Olof Engström, M. Kaniewska, Ying Fu et al
Applied Physics Letters. Vol. 85 (14), p. 2908-2910
Artikel i vetenskaplig tidskrift

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