Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
Artikel i vetenskaplig tidskrift, 2010

Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.

high–k material

MOS

conductance method

interface states

admittance

Författare

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 57 7 1702-1705

Ämneskategorier

Reglerteknik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TED.2010.2049064