Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
Artikel i vetenskaplig tidskrift, 2010
Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.
high–k material
MOS
conductance method
interface states
admittance
Författare
Bahman Raeissi
Chalmers, Teknisk fysik, Fysikalisk elektronik
Johan Piscator
Chalmers, Teknisk fysik, Fysikalisk elektronik
Olof Engström
Chalmers, Teknisk fysik, Fysikalisk elektronik
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 57 7 1702-1705 5467143Ämneskategorier
Reglerteknik
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1109/TED.2010.2049064