Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
Journal article, 2010

Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.

high–k material

MOS

conductance method

interface states

admittance

Author

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Olof Engström

Chalmers, Applied Physics, Physical Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 57 7 1702-1705

Subject Categories

Control Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TED.2010.2049064

More information

Created

10/7/2017