Bahman Raeissi

Gate stacks

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Hole emission mechanism in Ge/Si quantum dots

Spatial variarion of hole eigen energies in Ge/Si quantum wells

Interface state properties of high-k/SiOx/Si interfaces portrayed by multiparameter admittance spectroscopy

The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Charge carrier traffic at interfaces in nanoeletronic structures

Capture cross sections for holes at LaLuO/Si interfaces

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

An electrowetting-based microfluidic platform for magnetic bioassays

Multiparameter admittance spectroscopy (Invited)

Spatial variations of hole eigen energies in Ge/Si quantum wells

Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Wafer bonding strength increased by mobile ions

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Electron states in high-k dielectric/silicon structures

Multiphonon capture of electrons at high-k-silicon interfaces

Leakage current effects on C-V plots of high-k MOS capacitors

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Electron traps at HfO2/SiOx interfaces

A generalised methodology for oxide leakage current metric

Gd silicate: A high-k dielectric compatible with high temperature annealing

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Electrical properties of low-temperature bonded uni-polar Si/Si junctions