Bahman Raeissi

Visar 36 publikationer

2011

Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi, Johan Piscator, Y. Y. Chen et al
Journal of the Electrochemical Society. Vol. 158 (3), p. G63-G70
Artikel i vetenskaplig tidskrift
2011

Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska, Olof Engström, A. Karmous et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (2), p. 411 -413
Artikel i vetenskaplig tidskrift
2011

Spatial variarion of hole eigen energies in Ge/Si quantum wells

M. Kaniewska, Olof Engström, A. Karmous et al
AIP Conference Proceedings. Vol. 1399, p. 293-294
Paper i proceeding
2010

Capture cross sections for holes at LaLuO/Si interfaces

Olof Engström, F Ducroquet, Bahman Raeissi et al
Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 29, Bratislava, June 28 - 30 2010
Paper i proceeding
2010

Multiparameter admittance spectroscopy (Invited)

Olof Engström, Bahman Raeissi
ECS Transactions. Vol. 35 (3), p. 257-265
Paper i proceeding
2010

Interface state properties of high-k/SiOx/Si interfaces portrayed by multiparameter admittance spectroscopy

Bahman Raeissi, T Gutt, H. D. B. Gottlob et al
Proceedings of the 16th Workshop on Dielectrics in Microelectronics, p. 103, Bratislava, June 28 - 30 2010
Paper i proceeding
2010

Gate stacks

Olof Engström, I. Z. Mitrovic, S. Hall et al
Nanoscale CMOS: Innovative Materials, Modeling and Characterization, p. 23 - 67
Kapitel i bok
2010

Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

Y. Y Gomeniuk, Y. V. Gomieniuk, A. N. Nazarov et al
ECS Transactions. Vol. 33 (3), p. 221-227
Paper i proceeding
2010

Spatial variations of hole eigen energies in Ge/Si quantum wells

M Kaniewska, Olof Engström, A Karmous et al
30th International Conference on the Physics of Semiconductors, Seoul, July 25 - 30, 2010
Paper i proceeding
2010

Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces

Bahman Raeissi, Johan Piscator, Olof Engström
IEEE Transactions on Electron Devices. Vol. 57 (7), p. 1702-1705
Artikel i vetenskaplig tidskrift
2010

An electrowetting-based microfluidic platform for magnetic bioassays

S Chang, Vincent Schaller, Bahman Raeissi et al
The 14th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2010, 3-7 Oktober, Groningen, Neterlands. Vol. 2, p. 1331-1333
Paper i proceeding
2010

The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Electrochemical and Solid-State Letters. Vol. 13 (6), p. H179-H181
Artikel i vetenskaplig tidskrift
2010

Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited)

Olof Engström, Bahman Raeissi, Johan Piscator et al
Journal of Telecommunications and Information Technology. Vol. 1, p. 10-
Artikel i vetenskaplig tidskrift
2009

Wafer bonding strength increased by mobile ions

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Proceeding of EUROSOI 2009, p. 99-100
Paper i proceeding
2009

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Johan Piscator, Bahman Raeissi, Olof Engström
Applied Physics Letters. Vol. 94 (21), p. 213507-
Artikel i vetenskaplig tidskrift
2009

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Johan Piscator, Bahman Raeissi, Olof Engström
Journal of Applied Physics. Vol. 106 (5), p. 054510-
Artikel i vetenskaplig tidskrift
2009

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob, M. Schmidt, M Schmidt et al
Microelectronic Engineering. Vol. 86 (7-9), p. 1642-1645
Artikel i vetenskaplig tidskrift
2009

Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors

Y. Lu, S. Hall, L. Z. Tan et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 352-
Artikel i vetenskaplig tidskrift
2009

Charging phenomena at the interface between high-k dielectrics and SiOx interlayers

Olof Engström, Bahman Raeissi, Johan Piscator et al
8th Symposium Diagnostics & Yield Advanced Silicon Devices and Technologies for the ULSI Era, Warsaw, June 22 - 24, 2009 (Invited)
Paper i proceeding
2008

Leakage current effects on C-V plots of high-k MOS capacitors

Y Lu, S. Hall, I. Z. Mitrovic et al
WODIM, Berlin, June 2008
Paper i proceeding
2008

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Olof Engström, Bahman Raeissi, Johan Piscator
Journal of Applied Physics. Vol. 103 (10), p. Art. no. 104101-
Artikel i vetenskaplig tidskrift
2008

Electron states in high-k dielectric/silicon structures

Bahman Raeissi
Licentiatavhandling
2008

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, M Schmidt, M.C. Lemme et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 27 (1), p. 249-252
Artikel i vetenskaplig tidskrift
2008

Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon

P.K. Hurley, K. Cherkaoui, E O'Connor et al
J. Electrochem. Soc.. Vol. 155 (2), p. G13-G20
Artikel i vetenskaplig tidskrift
2008

Multiphonon capture of electrons at high-k-silicon interfaces

Olof Engström, Bahman Raeissi, Johan Piscator
Gordon Conference, New London, New Hampshire, August, 2008
Paper i proceeding
2008

A generalised methodology for oxide leakage current metric

Olof Engström, Johan Piscator, Bahman Raeissi et al
Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy, p. 167-
Paper i proceeding
2008

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
Solid-State Electronics. Vol. 52 (9), p. 1274-1279
Artikel i vetenskaplig tidskrift
2008

Electron traps at HfO2/SiOx interfaces

Bahman Raeissi, Yang Yin Chen, Johan Piscator et al
Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK, p. 130-133
Paper i proceeding
2007

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

Olof Engström, Bahman Raeissi, S. Hall et al
Solid State Electronics. Vol. 51, p. 622-
Artikel i vetenskaplig tidskrift
2007

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, Johan Piscator, Olof Engström et al
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007, p. 283-286
Paper i proceeding
2007

Extracting the relative dielectric constant for “high-k layers”from CV measurements – errors and error propagation

Octavian Buiu, S. Hall, Olof Engström et al
Microelectronics Reliability. Vol. 47, p. 678-
Artikel i vetenskaplig tidskrift
2007

Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation

P.K. Hurley, K. Cherkaoui, E O'Connor et al
Proc. Electrochemical Society Meeting, Washington DC, October 2007
Paper i proceeding
2006

Navigation aids in the search for future high-k dielectrics: physical and electrical trends

Olof Engström, Bahman Raeissi, Steve Hall et al
Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006)., p. 115-118
Artikel i vetenskaplig tidskrift
2006

Relation between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces

Bahman Raeissi, Anke Sanz-Velasco, Olof Engström
Proceeding of 210th ECS Meeting, Semiconductor Wafer Bonding 9: Science, Technology, and Applications, Vol. 3, No .6,. Vol. 3 (6), p. 217-226
Artikel i vetenskaplig tidskrift
2005

Electrical properties of low-temperature bonded uni-polar Si/Si junctions

Bahman Raeissi, Petra Amirfeiz, Olof Engström
Proc. 207th ECS-Meeting, Quebec 2005, Semiconductor Wafer Bonding VII, p. 205-
Artikel i vetenskaplig tidskrift

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