The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding
Artikel i vetenskaplig tidskrift, 2010

Mechanical bonding energies of oxygen plasma treated and room-temperature wafer bonded silicon surfaces have been measured as a function of storage time in parallel with measurements of electrical interface properties. The surface energy increases with time dependence similar to that of decreasing interface state concentration. The current vs voltage behavior reveals the existence of mobile ions. We suggest that these mobile charges, after the reaction with the interface states, give rise to the increased surface energy responsible for bonding.

silicon

surface treatment

elemental semiconductors

wafer bonding

surface energy

plasma materials processing

interface states

Författare

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Anke Sanz-Velasco

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

Electrochemical and Solid-State Letters

1099-0062 (ISSN)

Vol. 13 6 H179-H181

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1149/1.3355288