The Role of Mobile Charge in Oxygen Plasma-Enhanced Silicon-to-Silicon Wafer Bonding
Journal article, 2010

Mechanical bonding energies of oxygen plasma treated and room-temperature wafer bonded silicon surfaces have been measured as a function of storage time in parallel with measurements of electrical interface properties. The surface energy increases with time dependence similar to that of decreasing interface state concentration. The current vs voltage behavior reveals the existence of mobile ions. We suggest that these mobile charges, after the reaction with the interface states, give rise to the increased surface energy responsible for bonding.

silicon

surface treatment

elemental semiconductors

wafer bonding

surface energy

plasma materials processing

interface states

Author

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Anke Sanz-Velasco

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Electrochemical and Solid-State Letters

1099-0062 (ISSN)

Vol. 13 6 H179-H181

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1149/1.3355288

More information

Created

10/7/2017