High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Paper i proceeding, 2007
Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by MBE and ALD, and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
Författare
Bahman Raeissi
Chalmers, Mikroteknologi och nanovetenskap
Johan Piscator
Chalmers, Mikroteknologi och nanovetenskap
Olof Engström
Chalmers, Mikroteknologi och nanovetenskap
S. Hall
University of Liverpool
O Buiu
University of Liverpool
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
H.D.B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
P.K- Hurley
Tyndall National Institute at National University of Ireland, Cork
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
H.J. Osten
Leibniz Universität Hannover
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007
Vol. 2007 283-286
978-142441123-8 (ISBN)
Ämneskategorier
Annan teknik
DOI
10.1109/ESSDERC.2007.4430933
ISBN
978-142441123-8