High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Paper in proceedings, 2007

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by MBE and ALD, and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Author

Bahman Raeissi

Chalmers, Microtechnology and Nanoscience (MC2)

Johan Piscator

Chalmers, Microtechnology and Nanoscience (MC2)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2)

S. Hall

University of Liverpool

O Buiu

University of Liverpool

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

H.D.B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

P.K- Hurley

Tyndall National Institute at National University of Ireland, Cork

K. Cherkaoui

Tyndall National Institute at National University of Ireland, Cork

H.J. Osten

University of Hanover

ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007

283-286

Subject Categories

Other Engineering and Technologies

DOI

10.1109/ESSDERC.2007.4430933

ISBN

978-142441123-8

More information

Latest update

3/29/2018