High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Paper in proceeding, 2007
Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by MBE and ALD, and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
Author
Bahman Raeissi
Chalmers, Microtechnology and Nanoscience (MC2)
Johan Piscator
Chalmers, Microtechnology and Nanoscience (MC2)
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2)
S. Hall
University of Liverpool
O Buiu
University of Liverpool
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
H.D.B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
P.K- Hurley
Tyndall National Institute at National University of Ireland, Cork
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
H.J. Osten
University of Hanover
ESSDERC 2007 - 37th European Solid-State Device Research Conference; Munich; Germany; 11 September 2007 through 13 September 2007
Vol. 2007 283-286
978-142441123-8 (ISBN)
Subject Categories
Other Engineering and Technologies
DOI
10.1109/ESSDERC.2007.4430933
ISBN
978-142441123-8