Hole emission mechanism in Ge/Si quantum dots
Artikel i vetenskaplig tidskrift, 2011

The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected.

MBE

DLTS

Ge/Si

Self-assembled quantum dots

Författare

M. Kaniewska

Instytut Technologii Elektronowej

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

A. Karmous

Universitat Stuttgart

O. Kirfel

Universitat Stuttgart

E. Kasper

Universitat Stuttgart

Bahman Raeissi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Johan Piscator

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

G. Zaremba

Instytut Technologii Elektronowej

M Kaczmarczyk

Instytut Technologii Elektronowej

B Surma

Instytutu Technologii Materialow Elektronicznych w Warszawie

A Wnuk

Instytutu Technologii Materialow Elektronicznych w Warszawie

M Wzorek

Instytut Technologii Elektronowej

A Czerwinsky

Instytut Technologii Elektronowej

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 8 411 -413

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Annan teknik

DOI

10.1002/pssc.201000546