Hole emission mechanism in Ge/Si quantum dots
Journal article, 2011

The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected.

DLTS

Ge/Si

Self-assembled quantum dots

MBE

Author

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

A. Karmous

University of Stuttgart

O. Kirfel

University of Stuttgart

E. Kasper

University of Stuttgart

Bahman Raeissi

Chalmers, Microtechnology and Nanoscience (MC2)

Johan Piscator

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

G. Zaremba

Instytut Technologii Elektronowej (ITE)

M Kaczmarczyk

Instytut Technologii Elektronowej (ITE)

B Surma

Instytutu Technologii Materialow Elektronicznych w Warszawie

A Wnuk

Instytutu Technologii Materialow Elektronicznych w Warszawie

M Wzorek

Instytut Technologii Elektronowej (ITE)

A Czerwinsky

Instytut Technologii Elektronowej (ITE)

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 8 2 411 -413

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Engineering and Technologies

DOI

10.1002/pssc.201000546

More information

Latest update

9/6/2018 2