High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Artikel i vetenskaplig tidskrift, 2008

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Gd2O3

Capacitance frequency spectroscopy

High-k

HfO2

MOS

Capture cross section

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Publicerad i

Solid-State Electronics

0038-1101 (ISSN)

Vol. 52 Nummer/häfte 9 s. 1274-1279

Kategorisering

Ämneskategorier (SSIF 2011)

Materialteknik

Annan teknik

Elektroteknik och elektronik

Identifikatorer

DOI

10.1016/j.sse.2008.04.005

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Senast uppdaterat

2018-03-29