High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Artikel i vetenskaplig tidskrift, 2008

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 prepared by molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared by reactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Gd2O3

Capacitance frequency spectroscopy

High-k

HfO2

MOS

Capture cross section

Författare

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

S. Hall

University of Liverpool

O. Buiu

University of Liverpool

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

H.D.B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

P.K. Hurley

Tyndall National Institute at National University of Ireland, Cork

K. Cherkaoui

Tyndall National Institute at National University of Ireland, Cork

H.J. Osten

Leibniz Universität Hannover

Solid-State Electronics

0038-1101 (ISSN)

Vol. 52 9 1274-1279

Ämneskategorier

Materialteknik

Annan teknik

Elektroteknik och elektronik

DOI

10.1016/j.sse.2008.04.005