Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Artikel i vetenskaplig tidskrift, 2011

Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.

hfo2

ultrathin hafnium oxide

oxide-semiconductor capacitors

internal interfaces

defects

metal

gate stacks

border traps

generation statistics

dielectric interfaces

Författare

Bahman Raeissi

Universitetet i Oslo

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Johan Piscator

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Y. Y. Chen

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Journal of the Electrochemical Society

0013-4651 (ISSN)

Vol. 158 3 G63-G70

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1149/1.3530845

Mer information

Senast uppdaterat

2019-07-17