Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Journal article, 2011
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.
hfo2
ultrathin hafnium oxide
oxide-semiconductor capacitors
internal interfaces
defects
metal
gate stacks
border traps
generation statistics
dielectric interfaces
Author
Bahman Raeissi
University of Oslo
Chalmers, Microtechnology and Nanoscience (MC2)
Johan Piscator
Chalmers, Microtechnology and Nanoscience (MC2)
Y. Y. Chen
Chalmers, Microtechnology and Nanoscience (MC2)
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Journal of the Electrochemical Society
0013-4651 (ISSN) 1945-7111 (eISSN)
Vol. 158 3 G63-G70Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1149/1.3530845