Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents
Journal article, 2011

Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.

hfo2

ultrathin hafnium oxide

oxide-semiconductor capacitors

internal interfaces

defects

metal

gate stacks

border traps

generation statistics

dielectric interfaces

Author

Bahman Raeissi

University of Oslo

Chalmers, Microtechnology and Nanoscience (MC2)

Johan Piscator

Chalmers, Microtechnology and Nanoscience (MC2)

Y. Y. Chen

Chalmers, Microtechnology and Nanoscience (MC2)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Journal of the Electrochemical Society

0013-4651 (ISSN)

Vol. 158 3 G63-G70

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1149/1.3530845

More information

Latest update

7/17/2019