Navigation aids in the search for future high-k dielectrics: physical and electrical trends
Artikel i vetenskaplig tidskrift, 2006

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

Dielectric Constant

High-k Dielectric

Physical Properties of Dielectrics


Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Bahman Raeissi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Steve Hall

Octavian Buiu

Max Lemme

Heiner Gottlob

Paul Hurley

Karim Cherkaoui

Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).



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