Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems
Artikel i vetenskaplig tidskrift, 2009

Admittance spectroscopy is extended for measuring capacitance and conductance on metal-oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and temperature. An automatic setup has been designed for collecting data along these dimensions in one measurement cycle. The theory for admittance spectroscopy has been developed by starting from basic charge carrier statistics. Using numerical integration of energy dependent parameters instead of the commonly used analytical solution, conductance dispersion curves are obtained which do not need to be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface. Also, we find that interface state densities extracted by using traditional methods are four times lower than those obtained by using our theory. Experimental data presented in three-dimensional plots are compared with theoretical calculations, revealing the possibilities and limitations of the conductance method.

interface states

MIS structures

surface potential

electric admittance measurement

Författare

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 106 054510-

Ämneskategorier

Annan teknik

Övrig annan teknik

DOI

10.1063/1.3213384