Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems
Journal article, 2009

Admittance spectroscopy is extended for measuring capacitance and conductance on metal-oxide-semiconductor (MOS) structures as a function of gate voltage, frequency, and temperature. An automatic setup has been designed for collecting data along these dimensions in one measurement cycle. The theory for admittance spectroscopy has been developed by starting from basic charge carrier statistics. Using numerical integration of energy dependent parameters instead of the commonly used analytical solution, conductance dispersion curves are obtained which do not need to be adjusted by assuming lateral surface potential variations at the oxide-semiconductor interface. Also, we find that interface state densities extracted by using traditional methods are four times lower than those obtained by using our theory. Experimental data presented in three-dimensional plots are compared with theoretical calculations, revealing the possibilities and limitations of the conductance method.

interface states

MIS structures

surface potential

electric admittance measurement

Author

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 106 5 054510-

Subject Categories

Other Engineering and Technologies

Other Engineering and Technologies not elsewhere specified

DOI

10.1063/1.3213384

More information

Created

10/6/2017