Gd silicate: A high-k dielectric compatible with high temperature annealing
Artikel i vetenskaplig tidskrift, 2008

The authors report on the investigation of amorphous Gd-based silicates as high- k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd2 O3) and silicon oxide (Si O2) on silicon substrates are compared after annealing at temperatures up to 1000 °C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the Si O2 layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high- k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes. © 2009 American Vacuum Society.

Författare

H.D.B. Gottlob

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M Schmidt

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

M.C. Lemme

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

I.Z. Mitrovic

Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH

Maria Werner

University of Liverpool

W.M. Davey

University of Liverpool

S. Hall

University of Liverpool

P.R. Chalker

University of Liverpool

K. Cherkaoui

University of Liverpool

P.K. Hurley

Tyndall National Institute at National University of Ireland, Cork

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

S.B. Newcomb

Chalmers University of Technology

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

1071-1023 (ISSN)

Vol. 27 249-252

Ämneskategorier

Övrig annan teknik

DOI

10.1116/1.3025904