Gd silicate: A high-k dielectric compatible with high temperature annealing
Journal article, 2008

The authors report on the investigation of amorphous Gd-based silicates as high- k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd2 O3) and silicon oxide (Si O2) on silicon substrates are compared after annealing at temperatures up to 1000 °C. Subsequently formed metal oxide semiconductor capacitors show a significant reduction in the capacitance equivalent thicknesses after annealing. Transmission electron microscopy, medium energy ion scattering, and x-ray diffraction analysis reveal distinct structural changes such as consumption of the Si O2 layer and formation of amorphous Gd silicate. The controlled formation of Gd silicates in this work indicates a route toward high- k dielectrics compatible with conventional, gate first complementary metal-oxide semiconductor integration schemes. © 2009 American Vacuum Society.
Show all persons

Published in

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

21662746 (ISSN) 21662754 (eISSN)

Vol. 27 Issue 1 p. 249-252

Categorizing

Subject Categories (SSIF 2011)

Other Engineering and Technologies not elsewhere specified

Identifiers

DOI

10.1116/1.3025904

More information

Latest update

9/10/2018