Gd silicate: A high-k dielectric compatible with high temperature annealing
Journal article, 2008
Author
H.D.B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M Schmidt
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
I.Z. Mitrovic
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
Maria Werner
University of Liverpool
W.M. Davey
University of Liverpool
S. Hall
University of Liverpool
P.R. Chalker
University of Liverpool
K. Cherkaoui
University of Liverpool
P.K. Hurley
Tyndall National Institute at National University of Ireland, Cork
Bahman Raeissi
Chalmers, Applied Physics, Physical Electronics
Olof Engström
Chalmers, Applied Physics, Physical Electronics
S.B. Newcomb
Chalmers
Johan Piscator
Chalmers, Applied Physics, Physical Electronics
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21662746 (ISSN) 21662754 (eISSN)
Vol. 27 1 249-252Subject Categories
Other Engineering and Technologies not elsewhere specified
DOI
10.1116/1.3025904