Electron traps at HfO2/SiOx interfaces
Paper i proceeding, 2008

Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.

Författare

Bahman Raeissi

Chalmers, Teknisk fysik, Fysikalisk elektronik

Yang Yin Chen

Chalmers, Teknisk fysik, Fysikalisk elektronik

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK

1930-8876 (ISSN)

130-133

Ämneskategorier

Materialteknik

Annan teknik

Elektroteknik och elektronik

ISBN

978-1-4244-2363-7