Electron traps at HfO2/SiOx interfaces
Paper in proceedings, 2008

Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack.

Author

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Yang Yin Chen

Chalmers, Applied Physics, Physical Electronics

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Proceeding of 38th European Solid-State Device Research Conference (ESSDERC 2008), Edinburgh, Scotland, UK

1930-8876 (ISSN)

130-133

Subject Categories

Materials Engineering

Other Engineering and Technologies

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-2363-7

More information

Created

10/6/2017