Schottky barriers on silicon nanowires influenced by charge configuration
Artikel i vetenskaplig tidskrift, 2008

Due to the geometry offered by nanowires, it is possible to introduce electric fields directed from the wire wall toward a Schottky contact positioned on the end surface of a wire. In the present work a simple model demonstrating the effect of charge on the wire walls close to the metal semiconductor interface is presented. This is also compared to measurements on fabricated nanowire devices, showing that additional positive charge close to the interface will lower the effective Schottky barrier height.

elemental semiconductors

silicon

nanowires

semiconductor-metal boundaries

Schottky barriers

Författare

Johan Piscator

Chalmers, Teknisk fysik, Fysikalisk elektronik

Olof Engström

Chalmers, Teknisk fysik, Fysikalisk elektronik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 104 054515-

Ämneskategorier

Den kondenserade materiens fysik