A generalised methodology for oxide leakage current metric
Paper in proceeding, 2008

From calculations of semiconductor interface charge, oxide voltage and tunneling currents for MOS systems with equivalent oxide thickness (EOT) in the range of 1 nm, rules are suggested for making it possible to compare leakage quality of different oxides with an accuracy of a factor 2 – 3 if the EOT is known. The standard procedure suggested gives considerably better accuracy than the commonly used method to determine leakage at VFB+1V for n-type and VFB-1V for p-type substrates.


Olof Engström

Chalmers, Applied Physics, Physical Electronics

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

P.K. Hurley

K. Cherkaoui

S. Hall

M.C. Lemme

H.D.B. Gottlob

Proceeding of 9th European Workshop on Ultimate Integration of Silicon (ULIS), Udine, Italy

978-1-4244-1730-8 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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