Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy
Journal article, 2008

Using a method based on the frequency dependence of capacitance, cross sections for electron capture into energy states at the interlayer/silicon interface have been investigated for HfO2 that is deposited on silicon by reactive sputtering. We find that the capture cross sections are thermally activated and steeply increase with increasing energy depth. Both features can be attributed to the same physical origin, indicating vibronic trap properties, where the capture mechanism is governed by multiphonon processes.

semiconductor-insulator boundaries

elemental semiconductors

vibronic states

phonon-phonon interactions

electron traps

interface states

capacitance

silicon

hafnium compounds

Author

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Bahman Raeissi

Chalmers, Applied Physics, Physical Electronics

Johan Piscator

Chalmers, Applied Physics, Physical Electronics

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 103 10 Art. no. 104101-

Subject Categories

Condensed Matter Physics

DOI

10.1063/1.2921795

More information

Created

10/7/2017