Spatial variarion of hole eigen energies in Ge/Si quantum wells
Paper in proceeding, 2011

Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.

Ge/Si

DLTS

MBE

QWs

HRTEM

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Published in

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1399 p. 293-294
978-073541002-2 (ISBN)

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Areas of Advance

Nanoscience and Nanotechnology

Subject Categories (SSIF 2011)

Other Engineering and Technologies not elsewhere specified

Identifiers

DOI

10.1063/1.3666369

ISBN

978-073541002-2

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Latest update

9/6/2018 2