Spatial variarion of hole eigen energies in Ge/Si quantum wells
Paper in proceeding, 2011
Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
Ge/Si
DLTS
MBE
QWs
HRTEM
Author
M. Kaniewska
Instytut Technologii Elektronowej (ITE)
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
A. Karmous
University of Stuttgart
O. Kirfel
University of Stuttgart
E Kasper
University of Stuttgart
Bahman Raeissi
Chalmers, Microtechnology and Nanoscience (MC2)
Johan Piscator
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
G Zaremba
Instytut Technologii Elektronowej (ITE)
M Kaczmarczyk
Instytut Technologii Elektronowej (ITE)
M Wzorek
Instytut Technologii Elektronowej (ITE)
A Czerwinsky
Instytut Technologii Elektronowej (ITE)
B Surma
Instytutu Technologii Materialow Elektronicznych w Warszawie
A Wnuk
Instytutu Technologii Materialow Elektronicznych w Warszawie
AIP Conference Proceedings
0094-243X (ISSN) 1551-7616 (eISSN)
Vol. 1399 293-294978-073541002-2 (ISBN)
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Other Engineering and Technologies not elsewhere specified
DOI
10.1063/1.3666369
ISBN
978-073541002-2