Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
Artikel i vetenskaplig tidskrift, 2008

Electrical characterization and modeling of 2 times 50 um gatewidth InAs/AlSb HEMTs with 225 nm gate-length have been performed. The fabricated devices exhibited a transconductance gm of 650 mS/mm, an extrinsic cutoff frequency fT and an extrinsic maximum frequency of oscillation fmax of 120 and 90 GHz, respectively, already at a low VDS of 0.2 V. A minimum noise figure less than 1 dB between 2-18 GHz was achieved at a dc power consumption of only 10 mW/mm. This demonstrates the potential of InAs/AlSb HEMTs for low-power, low-noise applications. To account for the elevated gate-leakage current lG in the narrow-bandgap InAs/AlSb HEMT, the conventional field-effect transistor small-signal model has been extended. The relatively high IG was modeled by shunting both Cgs and Cgd with Rgs and Rgd, respectively. As a result, the small-signal S-parameters were more accurately modeled, especially for frequencies below 10 GHz. Utilizing this modeling approach, excellent agreement was obtained between measured and modeled S-parameters, unilateral power gain U (Mason's gain) and stability factor K.

AlSb

low power

HEMT

InAs

small-signal model

Författare

Mikael Malmkvist

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Eric Lefebvre

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Malin Borg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ludovic Desplanque

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Xavier Wallart

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Gilles Dambrine

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Sylvain Bollaert

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 56 2685-2691

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TMTT.2008.2006798