Properties of Metal/High-k Oxide/Graphene Structures
Paper i proceeding, 2017

The challenge of interpreting experimental data from capacitance versus voltage (C-V) measurements on metal/high-k oxide/graphene (MOG) structures is discussed. Theoretical expressions for the influence of interface states, bulk oxide traps, measurement frequency, temperature and puddles are derived and compared with experiments. The nature of oxide traps and their impact on C-V data is treated especially from the view of electron-lattice interaction at electron emission and capture and possible performance as border traps, resembling interface states. We find that characterization on detailed physical origins leading to effects on C-V data is a more complicated issue than the corresponding analysis of metal/oxide/semiconductor (MOS) structures.

Författare

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

M. C. Lemme

RWTH Aachen University

Universität Siegen

AMO

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

ECS Transactions

1938-5862 (ISSN) 1938-6737 (eISSN)

Vol. 80 1 157-176

Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 15 - In Memory of Samares Ka held during the 232nd Meeting of the Electrochemical-Society (ECS)
National Harbor, USA,

Ämneskategorier

Oorganisk kemi

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

DOI

10.1149/08001.0157ecst