The influence of inhomogeneous trap distribution on results of DLTS study
Artikel i vetenskaplig tidskrift, 2011

A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.

electron traps

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spectroscopy

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molecular-beam epitaxy

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semiconductors

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Författare

M. Kaczmarczyk

Instytut Technologii Elektronowej (ITE)

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Microelectronics and Reliability

0026-2714 (ISSN)

Vol. 51 7 1159-1161

Ämneskategorier

Fysik

Elektroteknik och elektronik

DOI

10.1016/j.microrel.2011.01.011

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Senast uppdaterat

2018-09-06