The influence of inhomogeneous trap distribution on results of DLTS study
Journal article, 2011

A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.

electron traps

v7

spectroscopy

1989

molecular-beam epitaxy

p399

semiconductors

and n

Author

M. Kaczmarczyk

Instytut Technologii Elektronowej (ITE)

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Microelectronics and Reliability

0026-2714 (ISSN)

Vol. 51 7 1159-1161

Subject Categories

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.microrel.2011.01.011

More information

Latest update

9/6/2018 2