Analysis of electron capture at oxide traps by electric field injection
Artikel i vetenskaplig tidskrift, 2013

Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.

Författare

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

N. Sedghi

University of Liverpool

I. Z. Mitrovic

University of Liverpool

S. Hall

University of Liverpool

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 102 211604

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1063/1.4807845