Analysis of electron capture at oxide traps by electric field injection
Artikel i vetenskaplig tidskrift, 2013
Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections.
Författare
Olof Engström
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
N. Sedghi
University of Liverpool
I. Z. Mitrovic
University of Liverpool
S. Hall
University of Liverpool
Publicerad i
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 102 Nummer/häfte 21 art. nr 211604Kategorisering
Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Den kondenserade materiens fysik
Identifikatorer
DOI
10.1063/1.4807845