Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy
Artikel i vetenskaplig tidskrift, 2011

A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.

Författare

W. Jung

Instytut Technologii Elektronowej

G. Zaremba

Instytut Technologii Elektronowej

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

M. Kaniewska

Instytut Technologii Elektronowej

Journal of Nanoscience and Nanotechnology

1533-4880 (ISSN)

Vol. 11 12 1-

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Annan teknik

DOI

10.1166/jnn.2011.4000