Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy
Journal article, 2011

A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.

Author

W. Jung

Instytut Technologii Elektronowej (ITE)

G. Zaremba

Instytut Technologii Elektronowej (ITE)

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

M. Kaniewska

Instytut Technologii Elektronowej (ITE)

Journal of Nanoscience and Nanotechnology

1533-4880 (ISSN)

Vol. 11 12 1-

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Engineering and Technologies

DOI

10.1166/jnn.2011.4000

More information

Latest update

9/6/2018 2