Effect of oxide traps on channel transport characteristics in graphene field effect transistors
Artikel i vetenskaplig tidskrift, 2017

A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

interface states

graphene

drain resistance

capacitance

Författare

Marlene Bonmann

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Olof Engström

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

1071-1023 (ISSN)

Vol. 35 1 01A115- 01A115

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

Annan elektroteknik och elektronik

DOI

10.1116/1.4973904