Effect of oxide traps on channel transport characteristics in graphene field effect transistors
Journal article, 2017

A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

interface states

graphene

drain resistance

capacitance

Author

Marlene Bonmann

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

1071-1023 (ISSN)

Vol. 35 1 01A115- 01A115

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1116/1.4973904

More information

Created

10/8/2017