Characterisation of interface electron state distributions at directly bonded silicon/silicon interfaces
Paper in proceeding, 1990
Measurement methods for characterizing the electrical properties of directly bonded Si/Si n/n-type or p/p-type interfaces are presented. The density of interface states in the bandgap of the semiconductor and the density of interface charges at the bonded interface are determined from measurements of current and capacitance vs. applied voltage
elemental semiconductors
interface electron states
semiconductor junctions
bonds (chemical)
silicon
Author
Stefan Bengtsson
Department of Solid State Electronics
Olof Engström
Department of Solid State Electronics
ESSDERC 90. 20th European Solid State Device Research Conference
1-
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering