HfO2 for strained-Si and strained-SiGe MOSFETs
Paper i proceeding, 2003

We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage

dielectric thin films

interface states

semiconductor materials

atomic layer deposition

elemental semiconductors

leakage currents

MOSFET

Ge-Si alloys

hafnium compounds

semiconductor device breakdown

silicon

Poole-Frenkel effect

Författare

M. Y. A. Yousif

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Mikael Johansson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Per Lundgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Stefan Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

J. Sundqvist

Uppsala universitet

Anders Harsta

Uppsala universitet

H. H. Radamson

Kungliga Tekniska Högskolan (KTH)

ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03

1930-8876 (ISSN)

255-

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/ESSDERC.2003.1256862

ISBN

0780379993