HfO2 for strained-Si and strained-SiGe MOSFETs
Paper in proceedings, 2003

We report on HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600°C on strained-Si and strained-SiGe layers. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1×1011 cm-2 eV-1 was obtained for the case of thick HfO2 films. The breakdown fields were in the range 2-5 MV/cm, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the case of a thin HfO2 film with an EOT of 1.25 nm and ultra-thin cap (2.5-3 nm) layers on Si0.77Ge0.23/Si. The carrier transport through these HfO2 films was found to follow Frenkel-Poole emission over a wide range of applied gate voltage

dielectric thin films

interface states

semiconductor materials

atomic layer deposition

elemental semiconductors

leakage currents

MOSFET

Ge-Si alloys

hafnium compounds

semiconductor device breakdown

silicon

Poole-Frenkel effect

Author

M. Y. A. Yousif

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Mikael Johansson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Per Lundgren

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Stefan Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

J. Sundqvist

Uppsala University

Anders Harsta

Uppsala University

H. H. Radamson

Royal Institute of Technology (KTH)

ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03

1930-8876 (ISSN)

255-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ESSDERC.2003.1256862

ISBN

0780379993

More information

Latest update

3/28/2018