Silicon on aluminum nitride structures formed by wafer bonding
Artikel i vetenskaplig tidskrift, 1994

This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si02. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures

wafer bonding

elemental semiconductors

silicon

silicon-on-insulator

sputter deposition

aluminium compounds

Författare

Stefan Bengtsson

Institutionen för fasta tillståndets elektronik

Manolis Choumas

Institutionen för fasta tillståndets elektronik

W. P. Maszara

Mats Bergh

Institutionen för fasta tillståndets elektronik

C. Olesen

Ulf Södervall

Institutionen för fysik

A. Litwin

1994 IEEE International SOI Conference Proceedings

35-

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/SOI.1994.514222