Silicon on aluminum nitride structures formed by wafer bonding
Journal article, 1994

This paper deals with the use of reactively sputtered aluminum nitride (AlN) films as insulators for Bond and Etch-back Silicon-On-Insulator (BESOI) materials. In SOI-applications where high power is dissipated in the silicon SOI-film the low thermal conductivity of the buried silicon dioxide layer may cause a temperature rise in the silicon film detrimentally affecting the device performance. An attractive alternative would be to replace the silicon dioxide of the SOI structure with another material, like diamond, silicon carbide or aluminum nitride. The thermal conductivity of AlN is considerably larger than that of Si02. This paper presents results on how sputter deposition of AlN may be combined with wafer bonding for the creation of highly thermally conductive SOI structures

wafer bonding

elemental semiconductors



sputter deposition

aluminium compounds


Stefan Bengtsson

Department of Solid State Electronics

Manolis Choumas

Department of Solid State Electronics

W. P. Maszara

Mats Bergh

Department of Solid State Electronics

C. Olesen

Ulf Södervall

Department of Physics

A. Litwin

1994 IEEE International SOI Conference Proceedings


Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering



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