Ulf Södervall

Attempt of the Metallic 3D Printing Technology for Millimeter-Wave Antenna Implementations

High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Adjustment of self-heating in long superconducting thin film NbN microbridges

Vertical single nanowire devices based on conducting polymers

Microscopic Si whiskers

Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale

Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch(2) Areal Density and Three-Dimensional Structuring of Polyaniline

Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices

Black silicon with high density and high aspect ratio nanowhiskers

On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams

Controlled thinning and surface smoothening of silicon nanopillars

Hybrid synthesis and processing schemes for highly-ordered polyaniline nanoarchitectures

Highly Ordered Conjugated Polymer Nanoarchitectures with Three-Dimensional Structural Control

World-to-chip interconnects for efficient loading of genomic DNA into microfluidic channels

Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

Planar double gate SOI MOS devices; Fabrication by wafer bonding over pre patterned cavities and electrical characterisation

Ni radiotracer diffusion in B2 ordered NiFeAl alloys

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Titanium release from implants prepared with different surface roughness

High Frequency Flip Chip Interconnection on Liquid Crystal Polymer Substrate Using Anisotropic Conductive Adhesive

Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Influence Of Prebonding Cleaning On The Electrical-Properties Of The Buried Oxide Of Bond-And-Etchback Silicon-On-Insulator Materials

Charge-Carrier Injection Into The Buried Oxide Of Wafer-Bonded Silicon-On-Insulator Materials

Low temperature oxides deposited by remote plasma enhanced CVD

Silicon on aluminum nitride structures formed by wafer bonding

Quantitative applications of secondary ion mass spectrometry : solid-state diffusion and mass fractionation studies