Ulf Södervall

Universitetslektor vid Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Undervisning, Projektledning-Myfab National Access, Processning

Källa: chalmers.se

Visar 31 publikationer

2015

Attempt of the Metallic 3D Printing Technology for Millimeter-Wave Antenna Implementations

Bing Zhang, Peter Linner, Camilla Kärnfelt et al
Asia-Pacific Microwave Conference, APMC 2015. Vol. 2
Paper i proceeding
2012

Vertical single nanowire devices based on conducting polymers

A. Vlad, C. A. Dutu, Piotr Jedrasik et al
Nanotechnology. Vol. 23 (2)
Artikel i vetenskaplig tidskrift
2012

Adjustment of self-heating in long superconducting thin film NbN microbridges

A. Stockhausen, K. Il'in, M. Siegel et al
Superconductor Science and Technology. Vol. 25 (3)
Artikel i vetenskaplig tidskrift
2012

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

V. Passi, Ulf Södervall, Bengt Nilsson et al
Microelectronic Engineering. Vol. 95, p. 83-89
Artikel i vetenskaplig tidskrift
2012

High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires

V. Passi, U. Bhaskar, T. Pardoen et al
Journal of Microelectromechanical Systems. Vol. 21 (4), p. 822-829
Artikel i vetenskaplig tidskrift
2011

Microscopic Si whiskers

S. Kalem, P. Werner, Mats Hagberg et al
Microelectronic Engineering. Vol. 88 (8), p. 2593-2596
Artikel i vetenskaplig tidskrift
2011

On-chip tensile testing of the mechanical and electro-mechanical properties of nano-scale silicon free-standing beams

U. Bhaskar, V. Passi, Ulf Södervall et al
Advanced Materials Research. Vol. 276, p. 117-126
Artikel i vetenskaplig tidskrift
2011

Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices

D. Velessiotis, A. M. Douvas, S. Athanasiou et al
Microelectronic Engineering. Vol. 88 (8), p. 2775-2777
Artikel i vetenskaplig tidskrift
2011

Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale

V. Passi, U. Bhaskar, T. Pardoen et al
Review of Scientific Instruments. Vol. 82 (11), p. art. no 116106-
Artikel i vetenskaplig tidskrift
2011

Controlled thinning and surface smoothening of silicon nanopillars

S. Kalem, P. Werner, Bengt Nilsson et al
Nanotechnology. Vol. 20 (44), p. 445303-
Artikel i vetenskaplig tidskrift
2011

Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch(2) Areal Density and Three-Dimensional Structuring of Polyaniline

Piotr Jedrasik, A. Vlad, Ulf Södervall
Journal of Nanoscience and Nanotechnology. Vol. 11 (10), p. 8924-8935
Artikel i vetenskaplig tidskrift
2011

Black silicon with high density and high aspect ratio nanowhiskers

S. Kalem, P. Werner, Örjan Arthursson et al
Nanotechnology. Vol. 22 (23)
Artikel i vetenskaplig tidskrift
2010

Hybrid synthesis and processing schemes for highly-ordered polyaniline nanoarchitectures

A. Vlad, Piotr Jedrasik, C. A. Dutu et al
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, p. 429-430
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

World-to-chip interconnects for efficient loading of genomic DNA into microfluidic channels

Ulf Södervall, Johan Karl Andersson
Journal of Micromechanics and Microengineering. Vol. 19 (10)
Artikel i vetenskaplig tidskrift
2009

Highly Ordered Conjugated Polymer Nanoarchitectures with Three-Dimensional Structural Control

A. Vlad, C. A. Dutu, P. Guillet et al
Nano Letters. Vol. 9 (8), p. 2838-2843
Artikel i vetenskaplig tidskrift
2007

Planar double gate SOI MOS devices; Fabrication by wafer bonding over pre patterned cavities and electrical characterisation

Ulf Södervall
Solid State electronics. Vol. 51(2), p. 231-238
Artikel i vetenskaplig tidskrift
2007

Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization

T.M Chung, B Olbrechts, Ulf Södervall et al
Solid State Electronics. Vol. 51 (2), p. 231-238
Artikel i vetenskaplig tidskrift
2006

Ni radiotracer diffusion in B2 ordered NiFeAl alloys

S. Divinski, F. Hisker, W. Löser et al
Intermetallics. Vol. 14 (3), p. 308-314
Artikel i vetenskaplig tidskrift
2005

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

T. Paskova, B. Arnaudov, P. P. Paskov et al
Journal of Applied Physics. Vol. 98 (3), p. 1-8
Artikel i vetenskaplig tidskrift
2004

High Frequency Flip Chip Interconnection on Liquid Crystal Polymer Substrate Using Anisotropic Conductive Adhesive

Gang Zou, Hans Grönqvist, Zonghe Lai et al
2004 4th IEEE International Conference on Polymers and Adhesives in Microelectronics and Photonics; Portland, OR; United States; 12 September 2004 through 15 September 2004. Vol. September (13-15), p. 137-140
Paper i proceeding
2004

Titanium release from implants prepared with different surface roughness

Ann Wennerberg, Ari Ide-Ektessabi, Shino Hatkamata et al
Clin Oral Implants Res. Vol. 15 (5), p. 505-12
Artikel i vetenskaplig tidskrift
2003

Effect of Si cap layer on parasitic channel operation in Si/SiGe metal-oxide-semiconductor structures

Alok Sareen, Y. Wang, Ulf Södervall et al
Journal Of Applied Physics. Vol. 93 (6), p. 3545-3552
Artikel i vetenskaplig tidskrift
2002

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ASDAM '02. Conference Proceedings. Fourth International Conference on Advanced Semiconductor Devices and Microsystems, p. 279-
Paper i proceeding
2002

ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

Mikael Johansson, M. Y. A. Yousif, Alok Sareen et al
ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference, p. 419-
Paper i proceeding
1998

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Journal Of The Electrochemical Society. Vol. 145 (5), p. 1645-1649
Artikel i vetenskaplig tidskrift
1998

Ultra-clean Si/Si interface formation by surface preparation and direct bonding in ultra-high vacuum

Karin Hermansson, Francois Grey, Stefan Bengtsson et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 401-
Paper i proceeding
1995

Influence Of Prebonding Cleaning On The Electrical-Properties Of The Buried Oxide Of Bond-And-Etchback Silicon-On-Insulator Materials

Per Ericsson, Stefan Bengtsson, Ulf Södervall
Journal Of Applied Physics. Vol. 78 (5), p. 3472-3480
Artikel i vetenskaplig tidskrift
1995

Charge-Carrier Injection Into The Buried Oxide Of Wafer-Bonded Silicon-On-Insulator Materials

Stefan Bengtsson, Per Ericsson, Ulf Södervall et al
Journal Of The Electrochemical Society. Vol. 142 (8), p. 2721-2726
Artikel i vetenskaplig tidskrift
1994

Low temperature oxides deposited by remote plasma enhanced CVD

Lars-Åke Ragnarsson, Stefan Bengtsson, Mats O. Andersson et al
Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94), p. 117-
Artikel i vetenskaplig tidskrift
1994

Silicon on aluminum nitride structures formed by wafer bonding

Stefan Bengtsson, Manolis Choumas, W. P. Maszara et al
1994 IEEE International SOI Conference Proceedings, p. 35-
Artikel i vetenskaplig tidskrift

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