Microscopic Si whiskers
Artikel i vetenskaplig tidskrift, 2011

Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications. (C) 2011 Elsevier B.V. All rights reserved.

Nanowhiskers

field

Photoluminescence

temperature

silicon nanowires

ow tp

Nanowires

Field emission

v134

1987

p1281

Black silicon

Silicon

Författare

S. Kalem

Turkiye Bilimsel ve Teknolojik Arastirma Kurumu

P. Werner

Max Planck-institutet

Mats Hagberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

V. Talalaev

Max Planck-institutet

Örjan Arthursson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Henrik Frederiksen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 88 2593-2596

Ämneskategorier

Fysik

DOI

10.1016/j.mee.2011.02.072