Microscopic Si whiskers
Journal article, 2011

Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications. (C) 2011 Elsevier B.V. All rights reserved.

Nanowhiskers

field

Photoluminescence

temperature

silicon nanowires

ow tp

Nanowires

Field emission

v134

1987

p1281

Black silicon

Silicon

Author

S. Kalem

Turkiye Bilimsel ve Teknolojik Arastirma Kurumu

P. Werner

Max Planck Institute

Mats Hagberg

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Bengt Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

V. Talalaev

Max Planck Institute

Örjan Arthursson

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Henrik Frederiksen

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Ulf Södervall

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 88 8 2593-2596

Subject Categories

Physical Sciences

DOI

10.1016/j.mee.2011.02.072

More information

Latest update

2/21/2018