Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale
Artikel i vetenskaplig tidskrift, 2011

Simple fabrication process and extraction procedure to determine the fracture strain of monocrystalline silicon are demonstrated. Nanowires/nanoribbons in silicon are fabricated and subjected to uniaxial tensile stress along the complete length of the beams. Large strains up to 5% are measured for nanowires presenting a cross section of 50 nm × 50 nm and a length of 2.5 μm. An increase in fracture strain for silicon nanowires (NWs) with the downscaling of their volume is observed, highlighting the reduction of the defects probability as volume is decreased.

Författare

V. Passi

Universite catholique de Louvain

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

U. Bhaskar

Universite catholique de Louvain

T. Pardoen

Universite catholique de Louvain

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Petersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mats Hagberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Jean-Pierre Raskin

Universite catholique de Louvain

Review of Scientific Instruments

0034-6748 (ISSN)

Vol. 82 11 art. no 116106-

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1063/1.3655464

PubMed

22129022

Mer information

Senast uppdaterat

2018-03-08