Note: Fast and reliable fracture strain extraction technique applied to silicon at nanometer scale
Journal article, 2011
Simple fabrication process and extraction procedure to determine the fracture strain of monocrystalline silicon are demonstrated. Nanowires/nanoribbons in silicon are fabricated and subjected to uniaxial tensile stress along the complete length of the beams. Large strains up to 5% are measured for nanowires presenting a cross section of 50 nm × 50 nm and a length of 2.5 μm. An increase in fracture strain for silicon nanowires (NWs) with the downscaling of their volume is observed, highlighting the reduction of the defects probability as volume is decreased.
Author
V. Passi
Universite catholique de Louvain
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
U. Bhaskar
Universite catholique de Louvain
T. Pardoen
Universite catholique de Louvain
Ulf Södervall
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Göran Petersson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Mats Hagberg
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Jean-Pierre Raskin
Universite catholique de Louvain
Review of Scientific Instruments
0034-6748 (ISSN) 1089-7623 (eISSN)
Vol. 82 11 art. no 116106- 116106Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1063/1.3655464
PubMed
22129022