Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices
Artikel i vetenskaplig tidskrift, 2011

In this work, the electrical conduction of planar Au junctions electrically bridged by a polyoxometalate-based self-assembled monolayer, aimed to be used in hybrid silicon/molecular memory devices, is discussed. Tunnelling assisted by the presence of polyoxometalate anions is recognised as the main conduction mechanism for these devices. Fluctuations and hysteresis that are profoundly observed in the current-voltage characteristics for the smallest junctions suggest that the anions number is the more crucial factor in the devices behaviour. Quantitative analysis of the obtained characteristics based on Simmons's model reveals an increase in the tunnelling barrier height as the electrode distance increases from 20 to 200 nm. (C) 2011 Elsevier B.V. All rights reserved.

Current-voltage

transport

characteristics

Molecular junctions

Tunnelling

Polyoxometalate monolayers

Författare

D. Velessiotis

Institute of Microelectronics, Athens

A. M. Douvas

Institute of Microelectronics, Athens

S. Athanasiou

Institute of Microelectronics, Athens

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Petersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Alestig

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

P. Argitis

Institute of Microelectronics, Athens

N. Glezos

Institute of Microelectronics, Athens

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 88 2775-2777

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.mee.2011.01.039