Technological and Material Related Challenges for Large Area, High Aspect-Ratio, Near Teradot/Inch(2) Areal Density and Three-Dimensional Structuring of Polyaniline
Artikel i vetenskaplig tidskrift, 2011

In this manuscript we report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PANI) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch(2). High resolution electron beam lithography was used to generate ordered 2D and 3D templates. A novel type of resist and dose-modulated 3D-electron beam lithography (RDM-3D-EBL), extensively exploiting the intrinsic properties of resist-electron beam interaction is detailed. Surface initiated and template confined aniline polymerization, through catalytic activity of metallic platinum, was then exploited to provide a genuine method for controlled nanoscale processing of polyaniline, a prototypical conjugated polymer that definitively settled the concept of synthetic metals. Using nanoscale polymerization reactors, ultimate resolution patterning and processing control of single polyaniline nanostructures was feasible. Aspects of the nanoscale polyaniline growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Near teradot/inch(2) pattern transfer technology, complex 3D structuring and physico-chemical functionalization of polyaniline can be subsequently harnessed to build a large variety of architectures with potential for emerging optoelectronic technologies. The method is scalable, can be applied on virtually any type of flexible or rigid substrates and provides a generic approach for nanopatterning surfaces with functional polymers. Technological and material related fabrication challenges are detailed and discussed.

aniline

polymerization

platinum

electron-beam lithography

deposition

Key-Lock Self-Assembly

3D e-Beam Lithography

growth

conducting polymers

Surface Confined Polymerization

nanofibers

nanoparticles

fabrication

Polyaniline

Near Teradot/Sqinch

Författare

Piotr Jedrasik

Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

A. Vlad

Universite catholique de Louvain

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

Journal of Nanoscience and Nanotechnology

1533-4880 (ISSN) 15334899 (eISSN)

Vol. 11 10 8924-8935

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1166/jnn.2011.3475

Mer information

Senast uppdaterat

2018-03-08