High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
Artikel i vetenskaplig tidskrift, 2012

An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 mu m. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.

strength

film mechanical-properties

stress

p37

aluminum

nanoelectromechanical systems (NEMS)

freestanding thin-films

material-testing-system

v234

giant piezoresistance

operties microstructure and processing

youngs modulus

Fracture strain

materials

bulge test

on-chip testing

mems

Författare

V. Passi

Universite catholique de Louvain

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

U. Bhaskar

Universite catholique de Louvain

T. Pardoen

Universite catholique de Louvain

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Petersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mats Hagberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

J. P. Raskin

Universite catholique de Louvain

Journal of Microelectromechanical Systems

1057-7157 (ISSN)

Vol. 21 4 822-829

Ämneskategorier

Fysik

DOI

10.1109/JMEMS.2012.2190711

Mer information

Senast uppdaterat

2018-03-08