Anisotropic vapor HF etching of silicon dioxide for Si microstructure release
Artikel i vetenskaplig tidskrift, 2012

Damages are created in a sacrificial layer of silicon-dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon-dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Based on the experimentally extracted etch rate of unimplanted and implanted silicon-dioxide, the patterning of the sacrificial layer can be predicted by simulation.

Vapor phase hydrofluoric acid release

Implantation of silicon oxide

Wet release

damage

mems fabrication

ion-implantation

photoresist sacrificial layer

Författare

V. Passi

Universite catholique de Louvain

Ulf Södervall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Bengt Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Göran Petersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mats Hagberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

C. Krzeminski

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

E. Dubois

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

B. Du Bois

Interuniversity Micro-Electronics Center at Leuven

J. P. Raskin

Universite catholique de Louvain

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 95 83-89

Ämneskategorier

Fysik

DOI

10.1016/j.mee.2012.01.005

Mer information

Senast uppdaterat

2018-03-08