Electrical Properties of Si-SiO2-Si Nanogaps
Artikel i vetenskaplig tidskrift, 2005

The chances of attaching organic molecules to silicon surfaces can be considerably enhanced if a robust nanogap structure with silicon electrodes can be used to connect the molecules. We describe the electrical properties of such an electrode structure, with a separation of the silicon surfaces in the 3–7 nm range. These silicon nanogaps are manufactured by partly removing the silicon dioxide insulator from a silicon–oxide–silicon material stack, by using a selective oxide etchant. After the activation of the gap (the etching), current instabilities appear, which are comparable to the properties of thin oxides after soft breakdown. Applying a constant voltage can reduce these current instabilities. We also address the issue of surface leakage currents for these nanogap structures.

Silicon nanogaps

Surface leakage currents

Molecular electronics

Författare

Jonas Berg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Franklin Che

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Per Lundgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Peter Enoksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Stefan Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 16 2197-2202

Ämneskategorier

Fysik

DOI

10.1088/0957-4484/16/10/037